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IRG4PC40FDPbF is a kind of insulated gate bipolar transistor with ultrafast soft recovery diode. Here you can get some information about the feature. First is the ultrfast feature which is optimized for medium operating frequencies (1-5 KHz in hard switching,>20KHz in resonant mode.Besides,Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.Furthermore,IGBT co-packaged with HEXFRED ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations.What's more,it is packed with industry standard TO-247AC package.At last,it is lead free. The following is about the absolute maximum ratings.The maximum VCES (collector-to-emitter voltage) is 600 V.The maximum IC(continuous collector current) is 49 A at TC=25 and 27 A at TC=100.The maximum ICM (Pulsed collector current) is 200 A.The ILM (clamped inductive load current) is 200 A.The maximum IF (diode continuous foward current) is 15 A at TC=100.The maximum IFM (diode maximum foward current) is 200 A. The maximum VGE (gate-to-emittor voltage) is ±20 V.The maximum PD (power dissipation) is 160 W at TC=25 and 65 W at TC=100.The TJ and TSTG (operating junction and storage temperature range) are both from -55 to 150.The soldering temperature for 10 seconds is 300.Then is about the thermal resistance.The maximum RJC (Junction-to-Case-IGBT) is 0.77/W and the maximum RJC (Junction-to-Case-Diode) is 1.7/W.The maximum RJA (Junction-to-Ambient typical socket mount) is 40/W.The typical RCS (Case-to-Sink,falt,greased surface) is 0.24/W. Next is about the static characteristics at TJ=25.The minimum V(BR)CES (drain-to-source breakdown voltage) is 600 V at VGE=0 V,IC=250A.The typical V(BR)CES/TJ (breakdown voltage temperature coefficient) is 0.70 V/ at VGE=0 V and IC=1.0mA.The minimum VGE(th) (gate threshold voltage) is 3.0 V and the maximum is 6.0 V at VCE=VGE,IC=250A.The maximum ICES (zero gate voltage collector current) is 250A at VGE=0 V,VCE=600 V and is 3500A at VCE=600 V,VGE=0 V,TJ=150.The maximum (IGES) (gate-to-emitter leakage current) is ±100 nA at VGE=±20 V.
IRG4PC40FDPBF Maximum Ratings
IRG4PC40FDPBF Features
IRG4PC40FPBF Parameters
Technical/Catalog Information
IRG4PC40FPBF
Vendor
International Rectifier
Category
Discrete Semiconductor Products
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
49A
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 27A
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-247-3 (TO-247AC, Straight Leads)
Packaging
Bag
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IRG4PC40FPBF IRG4PC40FPBF
IRG4PC40K Parameters
Technical/Catalog Information
IRG4PC40K
Vendor
International Rectifier
Category
Discrete Semiconductor Products
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
42A
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 25A
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-247-3 (TO-247AC, Straight Leads)
Packaging
Bag
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
IRG4PC40K IRG4PC40K
IRG4PC40K Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25
Continuous Collector Current
42
A
IC @ TC = 100
Continuous Collector Current
25
ICM
Pulsed Collector Current
84
ILM
Clamped Inductive Load Current
84
tsc
Short Circuit Withstand Time
10
µs
VGE
Gate-to-Emitter Voltage
±20
V
EARV
Reverse Voltage Avalanche Energy
15
mJ
PD @ TC = 25
Maximum Power Dissipation
160
W
PD @ TC = 100
Maximum Power Dissipation
65
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
IRG4PC40K Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package