IR6311, IR6311G, IR6320G Selling Leads, Datasheet
MFG:IOR Package Cooled:SMD D/C:08+
IR6311, IR6311G, IR6320G Datasheet download
Part Number: IR6311
MFG: IOR
Package Cooled: SMD
D/C: 08+
MFG:IOR Package Cooled:SMD D/C:08+
IR6311, IR6311G, IR6320G Datasheet download
MFG: IOR
Package Cooled: SMD
D/C: 08+
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Datasheet: IR6311G
File Size: 55002 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: IR6311G
File Size: 55002 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IR6320G
File Size: 61018 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
The IR6311G is a monolithic HIGH SIDE SWITCH with built in short circuit, over- temperature, ESD, inductive load turn off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting the average current during short circuit if the drain current exceeds 5A. The protection circuit latches off the high side switch if the junction temperature exceeds 170 and latches on after the junction temperature falls by 10. The Vcc (drain) to OUT (source) voltage is actively clamped at 55V, improving its performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating and referenced to the source of the power MOSFET. Thus the logic to power ground isolation can be as high as 50V. This allows operation with larger offset as well as controlling the switch during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short circuit, over temperature and open load detection.
Symbol | Parameter |
Min. |
Max. |
Units |
Test Conditions | |
Vcc |
Supply Voltage | Permanent Reverse |
-0.3 -16 |
50 - |
V |
Pin 5 to Pin 3 (1), for 10 seconds |
Voffset | Logic to Power Ground Offset |
Vcc -50 |
Vcc +0.3 |
|||
Vin | Input Voltage |
-0.3 |
7 | |||
Iin | Input Current |
- |
10 |
mA |
||
Vout | Output Voltage |
Vcc -50 |
Vcc +0.3 |
V |
||
Iout | Output Current |
- |
self-limited |
A |
||
Vdg | Diagnostic Output Voltage |
-0.3 |
7 |
V |
||
Idg | Diagnostic Output Current |
- |
10 |
mA |
||
Eav |
Repetitive Avalanche Energy |
- |
100 |
mJ |
I = 2A(2) | |
ESD1 | Electrostatic Discharge (Human Body Model) |
- |
4000 |
V |
C=100 pF, R = 1500 | |
ESD2 | Electrostatic Discharge (Machine Model) |
- |
500 |
V |
C=200 pF, R = 0 | |
PD | Power Dissipation |
- |
2 |
W |
Tambient=25 | |
TJop | Operating Junction Temperature Range |
-40 |
150 |
|||
TStg | Storage Temperature Range |
-40 |
150 |
NOTES:(1) with 15k resistors in input and diagnostic (2) maximum frequency depends on heatsink (rectangular waveform)
The IR6320G is a monolithic HIGH SIDE SWITCH with built in short circuit, over- temperature, ESD, inductive load turn off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting the average current during short circuit if the drain current exceeds 10A. The protection circuit latches off the high side switch if the junction temperature exceeds 170 and latches on after the junction temperature falls by 10. The Vcc (drain) to OUT (source) voltage is actively clamped at 55V, improving its performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating and referenced to the source of the power MOSFET. Thus the logic to power ground isolation can be as high as 50V.
This allows operation with larger offset as well as controlling the switch during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short circuit, over temperature and open load detection.
Minimum | Maximum | Units | Test Conditions | |||
Vcc | Supply Voltage | Permanent | -0.3 | 50 | V | Pin 3 to Pin 1 (1), for 10 seconds |
Reverse | -16 | - | ||||
Voffset | Logic to Power Ground Offset | Vcc -50 | Vcc +0.3 | |||
Vin | Input Voltage | -0.3 | 7 | |||
Iin | Input Current | - | 10 | mA | ||
Vout | Output Voltage | Vcc -50 | Vcc +0.3 | V | ||
Iout | Output Current | - | Self-limited | |||
Vdg | Diagnostic Output Voltage | -0.3 | 7 | V | ||
Idg | Diagnostic Output Current | - | 10 | mA | ||
Eav | Repetitive Avalanche Energy | - | 100 | mJ | I = 2A (2) | |
ESD1 | Electrostatic Discharge(Human Body Model) | - | 4000 | V | C = 100 pF, R = 1500 | |
ESD2 | Electrostatic Discharge (Machine Model) | - | 500 | V | C = 200 pF, R = 0 | |
PD | Power Dissipation | - | 2 | W | Tcase=25 | |
TJop | Operating Junction Temperature Range | -40 | 150 | |||
TStg | Storage Temperature Range | -40 | 150 |