IFD0455C24E03, IFD0455C478E03, IFD-53010 Selling Leads, Datasheet
MFG:SAMSUNG Package Cooled:2000 D/C: 00+
IFD0455C24E03, IFD0455C478E03, IFD-53010 Datasheet download
Part Number: IFD0455C24E03
MFG: SAMSUNG
Package Cooled: 2000
D/C: 00+
MFG:SAMSUNG Package Cooled:2000 D/C: 00+
IFD0455C24E03, IFD0455C478E03, IFD-53010 Datasheet download
MFG: SAMSUNG
Package Cooled: 2000
D/C: 00+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: IFD-53010
File Size: 88448 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IFD-53010
File Size: 88448 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IFD-53010
File Size: 88448 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
Hewlett-Packard's IFD-53010 and IFD-53110 are low phase noise silicon bipolar static digital frequency dividers using two scaled Emitter-Coupled-Logic (ECL) master-slave D flip-flops and buffer amplifiers. They are housed in hermetic high reliability surface mount packages suitable for commercial, industrial, and military applications. Typical applications include stabilized or digitally controlled local oscillators for GPS, SATCOM or military receivers, and frequency synthesizers and counters in instrumentation systems.
The IFD-53110 is a lower cost selected version of the IFD-53010, and is distinguished by a reduced operating frequency range.
The IFD series of frequency dividers is fabricated using Hewlett-Packard's 18 GHz, ft, ISOSAT™-2 silicon bipolar process which uses nitride selfalignment, submicrometer lithography, trench isolation, ionimplantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent device uniformity, performance, and reliability.
Symbol | Parameter | Units | Absolute Maximum[1] |
Vcc - Vee | Device Voltage | V | 8 |
Pdiss | Power Dissipation[2,3] | mW | 650 |
Pin | RF Input Power | dBm | +15 |
Tj | Junction Temperature | °C | 200 |
TSTG | Storage Temperature | °C | -65 to +200 |