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Surge non-repetitive forward current, sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
IF
IF,RMS
IF,SM
IF,RM
IF,max
TC <130
f=50 Hz
TC=25,tp=10ms
Tj =150 , TC =100 ,D=0.1
TC=25 ,tp=10s
4
5.6
32
18
132
A
i2t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
i2dt
VRRM
dv/dt
Ptot
Tj,Tstg
TC=25 ,tp=10ms
VR= 0...480
TC =25
5.1
600
50
37
-55...175
A2s
V
V/ns
W
IDD04S60C Features
· Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery/ No forward recovery · No temperature influence on the switching behavior · High surge current capability · Pb-free lead plating; RoHS compliant for target applications · Qualified according to JEDEC1) · Breakdown voltage tested at 5mA2)
IDD06E60 Maximum Ratings
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
600
V
Continous forward current TC=25°C TC=90°C
IF
14.7 10
A
Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave
IFSM
29
Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5
IFRM
22
Power dissipation TC=25°C TC=90°C
Ptot
46.8 26.6
W
Operating and storage temperature
Tj , Tstg
-55...+175
°C
Soldering temperature 1.6mm(0.063 in.) from case for 10s
TS
255
°C
IDD06E60 Features
• 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling
IDD09E60 Maximum Ratings
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
600
V
Continous forward current TC=25°C TC=90°C
IF
19.3 13
A
Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave
IFSM
40
Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5
IFRM
29.5
Power dissipation TC=25°C TC=90°C
Ptot
57.7 32.7
W
Operating and storage temperature
Tj , Tstg
-55...+175
°C
Soldering temperature 1.6mm(0.063 in.) from case for 10s
TS
255
°C
IDD09E60 Features
• 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling