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The HY62WT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
HY62WT08081E Maximum Ratings
Symbol
Parameter
Rating
Unit
Vcc, VIN, VOUT
Power Supply, Input/Output Voltage
4.5~5.5V
-0.3 to 7.0
V
2.7~3.6V
-0.3 to 4.6
V
TA
Operating Temperature
HY62WT08081E-C
0 to 70
°C
HY62WT08081E-E
-25 to 85
°C
HY62WT08081E-I
-40 to 85
°C
TSTG
Storage Temperature
-65 to 150
°C
PD
Power Dissipation
1.0
W
IOUT
Data Output Current
50
mA
TSOLDER
Lead Soldering Temperature & Time
260 ·10
°C·sec
Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
HY62WT08081E Features
· Fully static operation and Tri-state output · TTL compatible inputs and outputs · Low power consumption · Battery backup(LL-part) - 2.0V(min.) data retention · Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard)