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HY628100B

Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(L/LL-part) -. 2.0V(min) data retention· Standard pin configuration -. 32pin SOP - 525mil -. 32pin TSOPI - 8X20(Standard)PinoutSpecifications Symbol Parameter Rating Unit Remark ...

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SeekIC No. : 004368354 Detail

HY628100B: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(L/LL-part) -. 2.0V(min) data retention· Standard pin configuration -. 32pin SOP - 525mil -....

HY628100B Data Sheet

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Part Number:
HY628100B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·  Fully static operation and Tri-state output
·  TTL compatible inputs and outputs
·  Battery backup(L/LL-part) -. 2.0V(min) data retention
·  Standard pin configuration -. 32pin SOP - 525mil  -. 32pin TSOPI - 8X20(Standard)


Pinout

Connection Diagram


Specifications

Symbol Parameter Rating Unit Remark
Vcc, VIN, VOUT Power Supply, Input/Output Voltage -0.5 to 7.0 V  
TA Operating Temperature 0 to 70 °C HY628100B
-25 to 85 °C HY628100B-E
-40 to 85 °C HY628100B-I
TSTG TSTG Storage Temperature -65 to 125 °C  
PD Power Dissipation 1.0 W  
IOUT Data Output Current 50 mA  
TSOLDER Lead Soldering Temperature & Time 260 · 10 °C·sec  



Description

The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.




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