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HS3GB, HS3J, HS3JB

Table of contents:
Info of HS3GB
Info of HS3J
Info of HS3JB

HS3GB, HS3J, HS3JB Selling Leads, Datasheet

MFG:TSC Package Cooled:SMB/DO-214AA D/C:2009+

HS3GB, HS3J, HS3JB Datasheet download

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Part Number: HS3GB

MFG: TSC

Package Cooled: SMB/DO-214AA

D/C: 2009+

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HS3GB Maximum Ratings

PARAMETER	SYMBOL	HS3AB	HS3BB	HS3DB	HS3GB	HS3JB	HS3KB	HS3MB	UNIT
Maximum Recurrent Peak Reverse Voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS Bridge Input Voltage	VRMS	35	70	140	280	420	560	700	V
Maximum DC Blocking Voltage	VDC	50	100	200	400	600	800	1000	V
Maximum Average Forward Current .375" (9.5mm) lead length at TA=55	I(AV)	3.0							A
Peak Forward Surge Current : 8.3ms si ngle half si ne-wave superimposed on rated load(JEDEC method)	IFSM	150							A
Maximum Forward Voltage at 1.0A	VF	01.0			1.3	1.7			V
Maximum DC Reverse Current TJ=25 at Rated DC Blocking Voltage TJ=110	IR	5.0 100							uA
Typical Junction capacitance	CJ	50				30			pF
Typical Thermal Resistance	RJA	20							/W
Maximum Reverse Recovery Time	TRR	50				75			ns
Operating Temperature Range	TJ	-55 to +150
Storage Temperature Range	TSTG	-55 to + 150

HS3GB Features

Low cost
Diffused junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0

HS3J Maximum Ratings

Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%

Type Number	Symbol	HS 3A	HS 3B	HS 3D	HS 3F	HS 3G	HS 3J	HS 3K	HS M	Units
Maximum Recurrent Peak Reverse Voltage	V_RRM	50	100	200	300	400	600	800	1000	V
Maximum RMS Voltage	V_RMS	35	70	140	210	280	420	560	700	V
Maximum DC Blocking Voltage	V_DC	50	100	200	300	400	600	800	1000	V
Maximum Average Forward Rectified Current See Fig. 2	I_(AV)	3.0								A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method )	I_FSM	150								A
Maximum Instantaneous Forward Voltage @3.0A	V_F	1.0			1.3		1.7			V
Maximum DC Reverse Current@ TA=25 at Rated DC Blocking Voltage @ TA=100	I_R	10.0 200								uA uA
Maximum Reverse Recovery Time (Note 1)	T_rr	50				75				nS
Typical Junction Capacitance (Note 2)	C_j	80				50				pF
Operating Temperature Range	T_J	-55 to +150
Storage Temperature Range	T_STG	-55 to +150

Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Mounted on P.C.B. with 0.6"x0.6" ( 16 x 16 mm ) Copper Pad Areas.

HS3J Features

`Glass passivated junction chip.
` For surface mounted application
` Low forward voltage drop
` Low profile package
` Built-in stain relief, ideal for automatic placement
` Fast switching for high efficiency
` High temperature soldering: 260/10 seconds at terminals
` Plastic material used carries Underwriters Laboratory Classification 94V-O

HS3JB Maximum Ratings

PARAMETER	SYMBOL	HS3AB	HS3BB	HS3DB	HS3GB	HS3JB	HS3KB	HS3MB	UNIT
Maximum Recurrent Peak Reverse Voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS Bridge Input Voltage	VRMS	35	70	140	280	420	560	700	V
Maximum DC Blocking Voltage	VDC	50	100	200	400	600	800	1000	V
Maximum Average Forward Current .375" (9.5mm) lead length at TA=55	I(AV)	3.0							A
Peak Forward Surge Current : 8.3ms si ngle half si ne-wave superimposed on rated load(JEDEC method)	IFSM	150							A
Maximum Forward Voltage at 1.0A	VF	01.0			1.3	1.7			V
Maximum DC Reverse Current TJ=25 at Rated DC Blocking Voltage TJ=110	IR	5.0 100							uA
Typical Junction capacitance	CJ	50				30			pF
Typical Thermal Resistance	RJA	20							/W
Maximum Reverse Recovery Time	TRR	50				75			ns
Operating Temperature Range	TJ	-55 to +150
Storage Temperature Range	TSTG	-55 to + 150

HS3JB Features

Low cost
Diffused junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0

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