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HS3FB

Rectifiers 3A,300V,GLASS Pass HIGH Eff SMD Rect

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SeekIC No. : 00173283 Detail

HS3FB: Rectifiers 3A,300V,GLASS Pass HIGH Eff SMD Rect

HS3FB Data Sheet

floor Price/Ceiling Price

US $ .05~.05 / Piece | Get Latest Price
Part Number:
HS3FB
Mfg:
Taiwan Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~6000
  • Unit Price
  • $.05
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description

Product :
Configuration :
Reverse Voltage :
Forward Voltage Drop :
Recovery Time :
Forward Continuous Current :
Max Surge Current :
Reverse Current IR :
Mounting Style :
Package / Case :
Packaging :


Features:

· Glass passivated junction chip.
· For surface mounted application
· Low forward voltage drop
· Low profile package
· Built-in stain relief, ideal for automatic placement
· Fast switching for high efficiency
· High temperature soldering:260oC/10 seconds at terminals
· Plastic material used carries Underwriters Laboratory Classification 94V


Specifications

PARAMETER
SYMBOL
HS
3AB
HS
3BB
HS
3DB
HS
3FB
HS
3GB
HS
3JB
HS
3KB
 HS
3MB
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
 1000
V
Maximum RMS Bridge Input Voltage
VRMS
35
70
140
210
280
420
560
 700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
 1000
V
Maximum Average Forward Current .375" (9.5mm)
lead length at TA=55
I(AV)
3.0
A
Peak Forward Surge Current : 8.3ms si ngle half si ne-wave superimposed on rated load(JEDEC method)
IFSM
150
A
Maximum Forward Voltage at 1.0A
VF
1.0
1.3
1.7
V
Maximum DC Reverse Current TJ=25
at Rated DC Blocking Voltage TJ=110
IR
10
250
uA
Typical Junction capacitance
CJ
50
30
pF
Typical Thermal Resistance
RJA
20
/W
Maximum Reverse Recovery Time
TRR
50
75
ns
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts.
3. Measured on P.C.Board with 0.6" x 0.6" (16mm x 16mm) Copper Pad Area.


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