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HMCF80T, HMCIG-045-81-1118, HMC-MDB169

Table of contents:
Info of HMCF80T
Info of HMCIG-045-81-1118
Info of HMC-MDB169

HMCF80T, HMCIG-045-81-1118, HMC-MDB169 Selling Leads, Datasheet

MFG:(N/A) Package Cooled:06+ D/C:20,500

HMCF80T, HMCIG-045-81-1118, HMC-MDB169 Picture

HMCF80T, HMCIG-045-81-1118, HMC-MDB169 Datasheet download

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Part Number: HMCF80T

MFG: (N/A)

Package Cooled: 06+

D/C: 20,500

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HMC-MDB169 General Description

The HMC-MDB169 is a passive Double Balanced MMIC Mixer which utilizes GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology and can be used as either an upconverter or a downconverter. This compact mixer features wide IF bandwidth, low conversion loss and high LO to RF and LO to IF isolation. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. The HMC-MDB169 Double Balanced Mixer is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. This compact MMIC is a much smaller and more consistent alternative to hybrid style double balanced mixer assemblies. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

HMC-MDB169 Maximum Ratings

LO Drive	20 dBm
Storage Temperature	-65 to 150
Operating Temperature	-55 to 85

HMC-MDB169 Features

Passive Double Balanced Topology
High LO to RF Isolation: 30 dB
Low Conversion Loss: 8 dB
Wide IF Bandwidth: DC - 5 GHz
Die Size: 0.9 x 1.0 x 0.1 mm

HMC-MDB169 Typical Application

This HMC-MDB169 is ideal for:
• Short Haul / High Capacity Radios
• Point-to-Multi-Point Equipment
• Military Radar, ECM & EW
• SATCOM

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