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HMC608, HMC608LC4, HMC609

Table of contents:
Info of HMC608
Info of HMC608LC4
Info of HMC609

HMC608, HMC608LC4, HMC609 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:N/A D/C:2010+

HMC608, HMC608LC4, HMC609 Datasheet download

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Part Number: HMC608

MFG: HITTITE

Package Cooled: N/A

D/C: 2010+

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HMC608 General Description

The HMC608 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifi er chip. The amplifi er has two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left open). The electrical specifi cations in the table below are shown for the amplifi er operating in high gain mode. Operating from 9.5 to 11.5 GHz, the amplifi er provides 32 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5.0 V supply voltage. Noise fi gure is 5.5 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use.

HMC608 Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)	7 Vdc
Gate Bias Voltage (Vgg)	-4.0 to -1.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)	+10 dBm
Channel Temperature	175
Continuous Pdiss (T= 85 ) (derate 2.9 mW/ above 85 )	2.33W
Thermal Resistance (channel to package bottom)	39.6/ W
Storage Temperature	-65 to + 150
Operating Temperature	-55 to + 85

HMC608 Features

Output IP3: +33 dBm
Saturated Power: +27.5 dBm @ 23% PAE
Gain: 32 dB
Supply: +5V @ 310 mA
50 Ohm Matched Input/Output
2.1 x 1.2 x 0.1 mm Die Size

HMC608 Typical Application

The HMC608 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military End-Use

HMC609 General Description

The HMC609 is a GaAs PHEMT MMIC Low Noise Amplifi er (LNA) chip which operates from 2 to 4 GHz. The HMC609 features extremely fl at performance characteristics including 20 dB of small signal gain, 3.0 dB of noise fi gure and output IP3 of +36 dBm across the operating band. This versatile LNA is ideal for hybrid and MCM assemblies due to its compact size, consistent output power and DC blocked RF I/ O's. All data is measured with the chip in a 50 Ohm test fi xture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil).

HMC609 Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFin)(Vdd = +5.0 Vdc)

Channel Temperature

Continuous Pdiss (T = 85 )
(derate 18 mW/°C above 85 )

Thermal Resistance
(channel to ground pad)

Storage Temperature

Operating Temperature

7 Vdc

+15 dBm

150

1.17 W

55 /W

-65 to +150

-40 to +85

HMC609 Features

Excellent Gain Flatness: ±0.2 dB
High Gain: 20.5 dB
Low Noise Figure: 3 dB
Output IP3: +36 dBm
Output P1dB: +22 dBm
50 Ohm Matched Input/Output
Die Size: 2.1 x 1.3 x 0.1 mm

HMC609 Typical Application

The HMC609 is ideal for:
• Fixed Microwave
• Point-to-Multi-Point Radios
• Test & Measurement Equipment
• Radar & Sensors
• Military & Space

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