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HMC606LC5, HMC607, HMC607G7

Table of contents:
Info of HMC606LC5
Info of HMC607
Info of HMC607G7

HMC606LC5, HMC607, HMC607G7 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:N/A D/C:2010+

HMC606LC5, HMC607, HMC607G7 Datasheet download

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Part Number: HMC606LC5

MFG: HITTITE

Package Cooled: N/A

D/C: 2010+

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HMC606LC5 General Description

The HMC606LC5 is a GaAs InGaP HBT MMIC Distributed Amplifi er housed in a leadless 5 x 5 mm surface mount package which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a signifi cant improvement over FET-based distributed amplifi ers. The HMC606LC5 provides 13.5 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606LC5 amplifi er I/Os are internally matched to 50 Ohms and are internally DC blocked.

HMC606LC5 Maximum Ratings

Vcc1= Vcc2= 5V ...............................7V
RF Input Power (RFin) .....................+15 dBm
Channel Temperature .....................175
Continuous Pdiss (T = 85 )
(derate 6 mW/ above 85 )..........0.55 W
Thermal Resistance
(channel to ground paddle).............169.5 /W
Storage Temperature ......................-65 to +150
Operating Temperature ...................-40 to +85

HMC606LC5 Features

Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
P1dB Output Power: +15 dBm
Gain: 13.5 dB
Output IP3: +27 dBm
Supply Voltage: +5V @ 64 mA
50 Ohm Matched Input/Output
25mm2 Leadless SMT Package

HMC606LC5 Typical Application

The HMC606LC5 is ideal for:
• Radar, EW & ECM
• Microwave Radio
• Test Instrumentation
• Military & Space
• Fiber Optic Systems

HMC606LC5 Connection Diagram

HMC607 General Description

The HMC607 is a broadband high isolation nonrefl ective GaAs MESFET SPDT MMIC chip. Covering DC to 15 GHz, the switch features >55 dB isolation at lower frequencies and >45 dB at higher frequencies. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply

HMC607 Maximum Ratings

RF Input Power (A, A, B, B = 0/-5V) (0.5 - 6 GHz)	+30 dBm (@ +50 )
Control Voltage Range (A, A, B, B)	+1.0V to -7.5 Vdc
Channel Temperature	150
Thermal Resistance (R_TH) (junction to lead)	94 /W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

HMC607 Features

·High Isolation: >50 dB @ 10 GHz
·Low Insertion Loss: 1.4 dB Typical @ 6.0 GHz
·Non-Refl ective Design
·Die Size: 2.05 mm x 1.04 mm x 0.1 mm

HMC607 Typical Application

• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation

HMC607G7 General Description

The HMC607G7 is a broadband high isolation nonrefl ective GaAs MESFET SPDT switch in a hermetic surface mount package. Covering DC to 6.0 GHz, the switch features >55 dB isolation up to 2 GHz and >42 dB isolation up to 6.0 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply.

HMC607G7 Maximum Ratings

RF Input Power (A, A, B, B = 0/-5V) (0.5 - 6 GHz)	+30 dBm (@ +50 )
Control Voltage Range (A, A, B, B)	+1.0V to -7.5 Vdc
Channel Temperature	150
Thermal Resistance (R_TH) (junction to lead)	94/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

HMC607G7 Features

·High Isolation: 55 dB @ 2.0 GHz
42 dB @ 6.0 GHz
·Low Insertion Loss: 1.9 dB Typical @ 6.0 GHz
·Non-Refl ective Design
·Hermetic Surface Mount Package
·Higher Performance Drop-In Replacement for: Skyworks AS406M2-10

HMC607G7 Typical Application

The HMC607G7 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation

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