HMC581LP6, HMC582LP5, HMC583LP5 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC581LP6, HMC582LP5, HMC583LP5 Datasheet download
Part Number: HMC581LP6
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC581LP6, HMC582LP5, HMC583LP5 Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC582LP5 & HMC582LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5 & HMC582LP5E integrate resona-tors, negative resistance devices, varactor diodes and feature half frequency and ideby-4 outputs. The VCOs phase noise performance is excellent ove temperature, shock, and process due to the rsmonolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface ount package, and requires no external matching components.
Vcc(Dig), Vcc(Amp), Vcc(RF) | +5.5 Vdc |
Vtune | 0 to +15V |
Junction Temperature | 135 |
Continuous Pdiss (T=85 ) (derate 43.5mW/above 85 ) |
2.17 W |
Thermal Resistance (junction to ground paddle) |
23 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1A |
The HMC583LP5 & HMC583LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC583LP5 & HMC583LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCOs phase noise performance is excellent ovetemperature, shock, and process due to the scillators
monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 tions disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface ount package, and requires no external matching components.
Vcc(Dig), Vcc(Amp), Vcc(RF) | +5.5 Vdc |
Vtune | 0 to +15V |
Junction Temperature | 135 |
Continuous Pdiss (T=85 (derate 43.5 mW/ above 85 |
2.17 W |
Thermal Resistance (junction to ground paddle) |
23 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1A |