HMC565LC5, HMC565LCS, HMC566 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC565LC5, HMC565LCS, HMC566 Datasheet download
Part Number: HMC565LC5
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC565LC5, HMC565LCS, HMC566 Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC565LC5 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifi er housed in a leadless RoHS compliant 5x5mm SMT package. Operating from 6 to 20 GHz, the HMC565LC5 features 21 dB of small signal gain, 2.5 dB noise fi gure and IP3 of +20 dBm across the operating band. This self-biased LNA is ideal for microwave radios due to its single +3V supply operation, and DC blocked RF I/O's.
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) | +3.5 Vdc |
RF Input Power (RFIN)(Vdd = +3.0 Vdc) | 0 dBm |
Channel Temperature | 175 |
Continuous Pdiss (T=85) (derate 8.5 mW/C above 85) |
0.753/W |
Thermal Resistance (channel to ground paddle) |
119.5/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC566 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplii er (LNA) chip which operates from 29 to 36 z. The HMC566 provides 20 dB of small signal gain, 2.8 dB of noise i gure and output IP3 of 23 dBm across the operating . This selfbiased LNA is ideal for hybrid and MCM assemblies due to its compact size, positive gain slope single +3V upply operation, and DC blocked RF I/Os.All data is measured with the chip in a 50 Ohm test i xture connected via two .025 (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil).
Drain Bias Voltage (Vdd1, 2, 3, 4) | +3.5 Vdc |
RF Input Power (RFin)(Vdd = +3.0 Vdc) | +5 dBm |
Channel Temperature | 175 |
Continuous Pdiss (T= 85 ) (derate 9.6 mW/C above 85 ) |
0.82 W |
Thermal Resistance (channel to die bottom) |
104.2 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |