HMC52L76, HMC530LP5, HMC530LP5E Selling Leads, Datasheet
MFG:HITTITE Package Cooled:QFN12 D/C:2010+
HMC52L76, HMC530LP5, HMC530LP5E Datasheet download
Part Number: HMC52L76
MFG: HITTITE
Package Cooled: QFN12
D/C: 2010+
HMC52L76, HMC530LP5, HMC530LP5E
- Table of contents:
Info of HMC52L76
Info of HMC530LP5
Info of HMC530LP5E
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About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
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About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
HMC530LP5 General Description
The HMC530LP5 & HMC530LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC530LP5 & HMC530LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCOs phase noise performance is excellent ovetemperature, shock, and process due to the scillators
monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5 mount package, and requires no external matching components.
HMC530LP5 Maximum Ratings
| Vcc(Dig), Vcc(Amp), Vcc(RF) | +5.5 Vdc |
| Vtune | 0 to +15V |
| Junction Temperature | 135 |
| Continuous Pdiss (T=85 ) (derate 43.5 mW/ above 85 ) |
2.17 W |
| Thermal Resistance (junction to ground paddle) |
23 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
| ESD Sensitivity (HBM) | Class 1A |
HMC530LP5 Features
·Triple Output: Fo = 9.5 - 10.8 GHz
Fo/2 = 4.75 - 5.4 GHz
Fo/4 = 2.38 - 2.7 GHz
·Pout: +11 dBm
·Phase Noise: -110 dBc/Hz @100 kHz Typ.
·No External Resonator Needed
·QFN Leadless SMT Package, 25 mm2
Fo/2 = 4.75 - 5.4 GHz
Fo/4 = 2.38 - 2.7 GHz
·Pout: +11 dBm
·Phase Noise: -110 dBc/Hz @100 kHz Typ.
·No External Resonator Needed
·QFN Leadless SMT Package, 25 mm2
HMC530LP5 Typical Application
Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
·Point to Point/Multipoint Radio
·Test Equipment & Industrial Controls
·SATCOM
·Military End-Use
Outputs for:
·Point to Point/Multipoint Radio
·Test Equipment & Industrial Controls
·SATCOM
·Military End-Use
HMC530LP5E General Description
The HMC530LP5 & HMC530LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC530LP5 & HMC530LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCOs phase noise performance is excellent ovetemperature, shock, and process due to the scillators
monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5 mount package, and requires no external matching components.
HMC530LP5E Maximum Ratings
| Vcc(Dig), Vcc(Amp), Vcc(RF) | +5.5 Vdc |
| Vtune | 0 to +15V |
| Junction Temperature | 135 |
| Continuous Pdiss (T=85 ) (derate 43.5 mW/ above 85 ) |
2.17 W |
| Thermal Resistance (junction to ground paddle) |
23 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
| ESD Sensitivity (HBM) | Class 1A |
HMC530LP5E Features
·Triple Output: Fo = 9.5 - 10.8 GHz
Fo/2 = 4.75 - 5.4 GHz
Fo/4 = 2.38 - 2.7 GHz
·Pout: +11 dBm
·Phase Noise: -110 dBc/Hz @100 kHz Typ.
·No External Resonator Needed
·QFN Leadless SMT Package, 25 mm2
Fo/2 = 4.75 - 5.4 GHz
Fo/4 = 2.38 - 2.7 GHz
·Pout: +11 dBm
·Phase Noise: -110 dBc/Hz @100 kHz Typ.
·No External Resonator Needed
·QFN Leadless SMT Package, 25 mm2
HMC530LP5E Typical Application
Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
·Point to Point/Multipoint Radio
·Test Equipment & Industrial Controls
·SATCOM
·Military End-Use
Outputs for:
·Point to Point/Multipoint Radio
·Test Equipment & Industrial Controls
·SATCOM
·Military End-Use
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