HMC528, HMC528LC4, HMC529LP5 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC528, HMC528LC4, HMC529LP5 Datasheet download
Part Number: HMC528
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC528, HMC528LC4, HMC529LP5 Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC528 is a compact I /Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process. All data shown below is taken with the chip mounted in a 50 Ohm test fi xture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. This product is a much smaller alternative to hybrid style Image Reject Mixers and Single Sideband Upconverter assemblies.
RF / IF Input LO Drive Channel Temperature| Continuous Pdiss (T=85) (derate 6.9 mW/ above 85) Thermal Resistance (RTH) (junction to die bottom) Storage Temperature Operating Temperature |
+20 dBm |
The HMC528LC4 is a compact general purpose I/Q MMIC mixer in a leadless RoHS compliant SMT package, which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The mixer utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. This product is a much smaller alternative to hybrid style Image Reject Mixers and Single Sideband Upconverter assemblies. The HMC528LC4 eliminates the need for wire bonding allowing use of surface mount manufacturing techniques.
RF/IF Input | +20 dBm |
LO Drive | + 27 dBm |
Channel Temperature | 150 |
Continuous Pdiss (T=85) (derate 7.8 mW/ above 85) |
452 mW |
Thermal Resistance (RTH) (junction to die bottom) |
150 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 deg |
The HMC529LP5 & HMC529LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC529LP5 & HMC529LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs.
The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +8 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
Vcc1, Vcc2 | +5.5 Vdc |
Vtune | 0 to +15V |
Junction Temperature | 135 |
Continuous Pdiss (T=85) (derate 37 mW/C above 85 |
1.85 W |
Thermal Resistance (junction to ground paddle) |
27 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1A |