HMC514LP5, HMC515LP5, HMC516 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC514LP5, HMC515LP5, HMC516 Datasheet download
Part Number: HMC514LP5
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC514LP5, HMC515LP5, HMC516 Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC516LC5
File Size: 251076 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC514LP5 & HMC514LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC514LP5 & HMC514LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
Vcc1, Vcc2 | +3.5 Vdc |
Vtune |
0 to +15V |
Junction Temperature | 135 |
Continuous Pdiss (T = 85 ) (derate 27 mW/ above 85 ) |
1.3W |
Thermal Resistance (channel to ground paddle) |
37.5 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC515LP5 & HMC515LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
The HMC515LP5 & HMC515LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs.
The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +10 dBm typical rom a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
Vcc1, Vcc2 | +5.5 Vdc |
Vtune | 0 to +15V |
Channel Temperature | 135 |
Continuous Pdiss (T = 85) (derate 28.6 mW/ above 85) |
143W |
Thermal Resistance (junction to ground paddle) |
35 /W |
Storage Temperature | -65 to -150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1A |
The HMC516 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplii er (LNA) which covers the 7 to 17 GHz cy range. The HMC516 provides 20 dB of small signal gain, 1.8 dB of noise i gure and has an output IP3 greater than +20 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the ip in a 50 Ohm test i xture connected via0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) | +4 Vdc |
RF Input Power (RFin)(Vdd = +3.0 Vdc) | +5 dBm |
Channel Temperature | 175 |
Continuous Pdiss (T=85 ) (derate 14 mW/ above 85 ) |
1.25 W |
Thermal Resistance (junction to ground paddle) |
71 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55to +85 |
ESD Sensitivity (HBM) | Class 1A |