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HMC486, HMC486LP5, HMC488MS8E

Table of contents:
Info of HMC486
Info of HMC486LP5
Info of HMC488MS8E

HMC486, HMC486LP5, HMC488MS8E Selling Leads, Datasheet

MFG:HITTITE Package Cooled:N/A D/C:2010+

HMC486, HMC486LP5, HMC488MS8E Datasheet download

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Part Number: HMC486

MFG: HITTITE

Package Cooled: N/A

D/C: 2010+

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HMC486 General Description

The HMC486 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi er which operates from 7 to 9 GHz. This amplifi er die provides 26 dB of gain, +34 dBm of saturated power and 24% PAE from a +7.0 V supply voltage. Output IP3 is +40 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).

All data is taken with the chip in a 50 ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).

HMC486 Maximum Ratings

Drain Bias Voltage (Vdd)	+8 Vdc
Gate Bias Voltage (Vgg)	-2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +10 Vdc)	+15 dBm
Junction Temperature	175
Continuous Pdiss (T= 85) (derate 26mW/ above 85)	9.45 W
Thermal Resistance (channel to die bottom)	9.5/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to to +85
ESD Sensitivity (HBM)	Class 1A

HMC486 Features

Saturated Output Power: +34 dBm @ 24% PAE
Output IP3: +40 dBm
Gain: 26 dB
DC Supply: +7.0 V @ 1300 mA
50 Ohm Matched Input/Output
2.51 mm x 2.51 mm x 0.1 mm

HMC486 Typical Application

The HMC486 is ideal for use as a power amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space

HMC486LP5 General Description

The HMC486LP5 & HMC486LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi ers housed in leadless 5 x 5 mm surface mount packages. Operating from 7 to 9 GHz, the amplifi er provides 22 dB of gain, +33 dBm of saturated power and 20% PAE from a +7.0 V supply voltage. Output IP3 is +40 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC486LP5 & HMC486LP5E eliminate the need for wire bonding, allowing use of surface mount manufacturing techniques.

HMC486LP5 Maximum Ratings

Drain Bias Voltage (Vdd1, 2, 3, 4, 5)	+8 Vdc
Gate Bias Voltage (Vgg)	-2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +7.0 Vdc)	+20 dBm
Channel Temperature	150
Continuous Pdiss (T = 85 ) (derate 11.6 mW/above 85 )	10 W
Thermal Resistance (channel to ground paddle)	6.5 /W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

HMC486LP5 Features

Saturated Power: +33 dBm @ 20% PAE
+40 dBm Output IP3
22 dB Gain
+7.0 V @ 1300 mA Supply
50 Ohm Matched Input/Output
25 mm2 Leadless SMT Package

HMC486LP5 Typical Application

The HMC486LP5 & HMC486LP5E is ideal for use as a power amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment and Sensors
• Military End-Use

HMC486LP5 Connection Diagram

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