HMC459, HMC460, HMC460LC5 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:2009+ROHS D/C:07+
HMC459, HMC460, HMC460LC5 Datasheet download
Part Number: HMC459
MFG: HITTITE
Package Cooled: 2009+ROHS
D/C: 07+
MFG:HITTITE Package Cooled:2009+ROHS D/C:07+
HMC459, HMC460, HMC460LC5 Datasheet download
MFG: HITTITE
Package Cooled: 2009+ROHS
D/C: 07+
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Datasheet: HMC459
File Size: 264545 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
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PDF/DataSheet Download
Datasheet: HMC460
File Size: 292045 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
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The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifi er die which operates between DC and 18 GHz. The amplifi er provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain fl atness is good making the HMC459 ideal for EW, ECM and radar driver amplifi er applications. The HMC459 amplifi er I/O's are internally matched to 50 Ohms facilitating easy integration into Multi- Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Drain Bias Voltage (Vdd) | +9.0 Vdc |
Gate Bias Voltage (Vgg1) | -2.0 to 0 Vdc |
Gate Bias Voltage (Vgg2) | (Vdd -8.0) Vdc to Vdd |
RF Input Power (RFin)(Vdd = +8.0 Vdc) | +23 dBm |
Channel Temperature | 175°C |
Continuous Pdiss (T= 85 °C) (derate 51.5 mW/°C above 85 °C) |
4.64 W |
Thermal Resistance (channel to die bottom) |
19.4 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |
The HMC460 is a GaAs MMIC PHEMT Low Noise Distributed Amplifi er die which operates between DC and 20 GHz. The amplifi er provides 14 dB of gain, 2.5 dB noise fi gure and +16 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +8V supply. The HMC460 amplifi er can easily be integrated into Multi-Chip- Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Drain Bias Voltage (Vdd) | +9.0 Vdc |
Gate Bias Voltage (Vgg1) | -2.0 to 0 Vdc |
RF Input Power (RFin)(Vdd = +8.0 Vdc) | +23 dBm |
Channel Temperature | 175 °C |
Continuous Pdiss (T = 85 °C) (derate 24 mW/°C above 85 °C) |
2.17 W |
Thermal Resistance (channel to die bottom) |
41.5 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |
The HMC460LC5 is a GaAs MMIC PHEMT Low Noise Distributed Amplifi er in a leadless 5x5 mm ceramic surface mount package which operates from DC to 20 GHz. The amplifi er provides 14 dB of gain, 2.5 dB noise fi gure and +16.5 dBm of output power at 1 dB gain compression while requiring only 75 mA from a Vdd = 8V supply. Gain fl atness is excellent from DC to 20 GHz making the HMC460LC5 ideal for EW, ECM, Radar and test equipment applications. The wideband amplifi er I/Os are internally matched to 50 Ohms.
Drain Bias Voltage (Vdd) | +9 Vdc |
Gate Bias Voltage (Vgg1) | -2 to 0 Vdc |
RF Input Power (RFIN)(Vdd = +8 Vdc) | +10 dBm |
Channel Temperature | 175 |
Continuous Pdiss (T = 85) (derate 23 mW/ above 85) |
2W |
Thermal Resistance (channel to die bottom) |
44.4/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |