HMC440Q46G, HMC441, HMC441LC3BTR Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC440Q46G, HMC441, HMC441LC3BTR Datasheet download
Part Number: HMC440Q46G
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC440Q46G, HMC441, HMC441LC3BTR Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: HMC441
File Size: 287940 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC441 is an effi cient GaAs PHEMT MMIC Medium Power Amplifi er which operates between 6.0 and 18.0 GHz*. The amplifi er provides 15.5 dB of gain, +22 dBm of saturated power, and 23% PAE from a +5.0 V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. The HMC441 amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (.99mm2) size. The backside of the die is both RF and DC ground, simplifying the assembly process and reducing performance variation. All data is tested with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Drain Bias Voltage (Vdd) | +5.5 Vdc |
Gate Bias Voltage (Vgg1,Vgg2) | -8.0 to 0 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +20 dBm |
Channel Temperature | 175 °C |
Continuous Pdiss (T= 85 °C) (derate 10 mW/°C above 85 °C) |
0.9 W |
Thermal Resistance (channel to die bottom) |
100 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |