HMC383, HMC383LC4, HMC383LP4 Selling Leads, Datasheet
MFG:HITTITE D/C:07+
HMC383, HMC383LC4, HMC383LP4 Datasheet download
Part Number: HMC383
MFG: HITTITE
Package Cooled:
D/C: 07+
MFG:HITTITE D/C:07+
HMC383, HMC383LC4, HMC383LP4 Datasheet download
MFG: HITTITE
Package Cooled:
D/C: 07+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC383 is a general purpose GaAs PHEMT MMIC Driver Amplifi er which operates between 12 and 30 GHz. The amplifi er provides 16 dB of gain and +18 dBm of saturated power from a +5.0V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifi er approach in multiple radio bands.
The HMC383 amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its compact size, single supply operation, and DC blocked RF I/Os. All data is measured with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Drain Bias Voltage (Vdd) | +5.5 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +10 dBm |
Junction Temperature | 175 |
Continuous Pdiss (T= 85) (derate 9.9mW/ above 85) |
0.89 W |
Thermal Resistance (channel to die bottom) |
101.0/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to to +85 |
ESD Sensitivity (HBM) | Class 1A |
The HMC383LC4 is a general purpose GaAs PHEMT MMIC Driver Amplifi er housed in a leadless RoHS compliant SMT package. The amplifi er provides 15 dB of gain and +18 dBm of saturated power from a single +5.0V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifi er approach in multiple radio bands. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC383LC4 is housed in a RoHS compliant leadless 4x4 mm package allowing the use of surface mount manufacturing techniques
Drain Bias Voltage (Vdd) | +5.5 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +10 dBm |
Channel Temperature | 175 |
Continuous Pdiss (Ta = 85 ) (derate 3.95 mW/ above 85 ) |
0.92W |
Thermal Resistance (junction to ground paddle) |
98 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
ESD Sensitivity (HBM) | Class 1A |