HMC375LP3ETR, HMC376LP3, HMC376LP3E Selling Leads, Datasheet
MFG:HITTITE Package Cooled:NULL D/C:09+
HMC375LP3ETR, HMC376LP3, HMC376LP3E Datasheet download
Part Number: HMC375LP3ETR
MFG: HITTITE
Package Cooled: NULL
D/C: 09+
MFG:HITTITE Package Cooled:NULL D/C:09+
HMC375LP3ETR, HMC376LP3, HMC376LP3E Datasheet download
MFG: HITTITE
Package Cooled: NULL
D/C: 09+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC376LP3 & HMC376LP3E are GaAs PHEMT MMIC Low Noise Amplifi ers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifi er has been optimized to provide 0.7 dB noise fi gure, 15 dB gain and +36 dBm output IP3 from a single supply of +5.0V. Input and output return losses are 14 and 12 dB respectively and the LNA requires only one external component to optimize the RF Input match.The HMC376LP3 & HMC376LP3E share the same package and pinout with the HMC382LP3 1.7 - 2.2 GHz LNA. The HMC376LP3 & HMC376LP3E feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.
Drain Bias Voltage (Vdd) | +8.0 Vdc |
RF Input Power (RFin)(Vs = +5.0 Vdc) | +15 dBm |
Channel Temperature | 150 |
Continuous Pdiss (T = 85 ) (derate 11.83 mW/ above 85 ) |
0.769 W |
Thermal Resistance (channel to ground paddle) |
84.5 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |