HMC370LP4E, HMC374, HMC374ETR Selling Leads, Datasheet
MFG:HITTITE Package Cooled:1000 D/C:06+
HMC370LP4E, HMC374, HMC374ETR Datasheet download
Part Number: HMC370LP4E
MFG: HITTITE
Package Cooled: 1000
D/C: 06+
MFG:HITTITE Package Cooled:1000 D/C:06+
HMC370LP4E, HMC374, HMC374ETR Datasheet download
MFG: HITTITE
Package Cooled: 1000
D/C: 06+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC374
File Size: 255291 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC370LP4 & HMC370LP4E are active miniature x4 frequency multipliers utilizing InGaP GaAs HBT technology in 4x4 mm leadless surface mount packages. Power output is 0 dBm typical from a 5.0V supply voltage and varies little vs. input power, temperature and supply voltage. Suppression of undesired fundamental and sub-harmonics is >22 dBc typical with respect to output signal level. The low additive SSB phase noise of -140 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC370LP4 & HMC370LP4E are ideal for use in LO multiplier chains allowing reduced parts count vs. traditional approaches.
RF Input (Vcc= +5V) | +20 dBm |
Vcc | +6.0V |
Channel Temperature | 150 |
Continuous Pdiss (T = 85) (Derate 8.1 mW/ above 85) |
530 mW |
Thermal Resistance (Rth) (junction to lead) |
123.6 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC374 & HMC374E are general purpose broad band Low Noise Amplifi ers (LNA) for use in the 0.3-3 GHz frequency range. The LNA provides 15 dB of gain and a 1.5 dB noise fi gure from a single positive supply of +2.75 to +5.5V. The low noise fi gure coupled with a high P1dB (22 dBm) and high OIP3 (37 dBm) make this part ideal for cellular applications. The compact LNA design utilizes on-chip matching for repeatable gain and noise fi gure performance. To minimize board area the design is offered in a low cost SOT26 package that occupies only 0.118" x 0.118".
Drain Bias Voltage (Vdd) | +5.0 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +10 dBm |
Channel Temperature | 150 °C |
Continuous Pdiss (T = 85 °C) (derate 7.5 mW/°C above 85 °C) |
0.488 W |
Thermal Resistance (channel to ground paddle) |
133 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |