HMC327MS8GE, HMC327MS8GTR, HMC-327SE OE04 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:MSOP8 D/C:06+
HMC327MS8GE, HMC327MS8GTR, HMC-327SE OE04 Datasheet download
Part Number: HMC327MS8GE
MFG: HITTITE
Package Cooled: MSOP8
D/C: 06+
MFG:HITTITE Package Cooled:MSOP8 D/C:06+
HMC327MS8GE, HMC327MS8GTR, HMC-327SE OE04 Datasheet download
MFG: HITTITE
Package Cooled: MSOP8
D/C: 06+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC327MS8G & HMC327MS8GE are high effi - ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi ers which operate between 3.0 and 4.0 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use.
Collector Bias Voltage (Vcc) | +6.0 Vdc |
Control Voltage (Vpd) | +5.5 Vdc |
RF Input Power (RFin)(Vcc = +2.4 Vdc) | +16dBm |
Junction Temperature | 150 |
Continuous Pdiss (T = 85 ) (derate 9 mW/ above 85 ) |
1.88 W |
Thermal Resistance (junction to lead) |
34/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |