HMC288MS8E, HMC288MS8G, HMC291 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:MSOP8 D/C:2005
HMC288MS8E, HMC288MS8G, HMC291 Datasheet download
Part Number: HMC288MS8E
MFG: HITTITE
Package Cooled: MSOP8
D/C: 2005
MFG:HITTITE Package Cooled:MSOP8 D/C:2005
HMC288MS8E, HMC288MS8G, HMC291 Datasheet download
MFG: HITTITE
Package Cooled: MSOP8
D/C: 2005
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC291
File Size: 149637 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC288MS8 & HMC288MS8E are broadband 3- bit positive control GaAs IC digital attenuators in 8 lead MSOP surface mount plastic packages. Covering 0.7 to 3.7 GHz, the insertion loss is typically less than 1.2 to 1.8 dB. The attenuator bit values are 2 (LSB), 4, and 8 dB for a total attenuation of 14 dB. Accuracy is excellent at ± 0.3 dB typical with an IIP3 of up to +51 dBm. Three bit control voltage inputs, toggled between 0 and +3 to +5V, are used to select each attenuation state at less than 50 uA each. A single Vdd bias of +3 to +5V applied through an external 5K Ohm resistor is required while occupying less than 14.8 mm2.
Control Voltage (V1, V2, V3) Bias Voltage (Vdd) Storage Temperature Operating Temperature RF Input Power (0.7 - 4 GHz) |
Vdd + 0.5 Vdc +8.0 Vdc -65 to +150 -40 to +85 +28 dBm |
Control Voltage (V1,V2) | Vdd +0.5 Vdc |
Bias Voltage (Vdd) | +8.0 Vdc |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
RF Input Power(0.7 - 4 GHz) | +28 dBm |