HMC-ALH509, HMC-APH196, HMC-APH403 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC-ALH509, HMC-APH196, HMC-APH403 Datasheet download
Part Number: HMC-ALH509
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC-ALH509, HMC-APH196, HMC-APH403 Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC-ALH509 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Drain Bias Voltage | +3 Vdc |
Gate Bias Voltage | -0.8 to +0.2 Vdc |
RF Input Power | -5 dBm |
Thermal Resistance (channel to die bottom) |
123 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |