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The Hitachi HM62W8128B is a CMOS static RAM organized 131,072-word ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 mm Hi-CMOS shrink process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The device, packaged in a 525-mil SOP (460-mil body SOP) or a 8 mm ×20 mm TSOP with thickness of 1.2 mm, is available for high density mounting. TSOP package is suitable for cards, and reverse type TSOP is also provided.
HM62W8128B Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage*1
VCC
0.5 to +4.6
V
Terminal voltage*1
VT
0.5*2 to VCC + 0.3*3
V
Power dissipation
PT
1.0
W
Operating temperatue range
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
10 to + 85
°C
Notes: 1. Relative to VSS 2. VT min: 3.0 V for pulse half-width 30 ns 3. Maximum voltage is 4.6 V
HM62W8128B Features
• Single 3.3 V supply • Fast access time: 100/120 ns (max) • Power dissipation: - Active: 23 mW/MHz (typ) - Standby: 4 W (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output. Three state output • Directry CMOS compatible all inputs and outputs. • Capability of battery backup operation. 2 chip selection for battery backup