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HM621100A

Features: · Single 5 V supply and high density 28-pin package (DIP and SOJ)· High speed Access time: 20/25/35 ns (max)· Low power dissipation Active mode: 350 mW (typ) Standby mode: 100 mW (typ)· Completely static memory required No clock or timing strobe required· Equal access and cycle time· Dir...

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SeekIC No. : 004363482 Detail

HM621100A: Features: · Single 5 V supply and high density 28-pin package (DIP and SOJ)· High speed Access time: 20/25/35 ns (max)· Low power dissipation Active mode: 350 mW (typ) Standby mode: 100 mW (typ)· Co...

HM621100A Data Sheet

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Part Number:
HM621100A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Single 5 V supply and high density 28-pin package (DIP and SOJ)
·  High speed
     Access time: 20/25/35 ns (max)
·  Low power dissipation
     Active mode: 350 mW (typ)
     Standby mode: 100 mW (typ)
·  Completely static memory required
      No clock or timing strobe required
·  Equal access and cycle time
·  Directly TTL compatible
      All inputs and outputs


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
Vin
0.5*1 to +7.0
V
Power dissipation
PT
1.0
W
Operating temperature range
Topr
0 to +70
°C
Storage temperature range
Tstg
55 to +125
°C
Storage temperature range under bias
Tbias
10 to +85
°C

Notes:
1. Vin min : 2.0 V for pulse width 10 ns.



Description

The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word ×1-bit. It realizes high speed access time (20/25/35 ns) and low power consumption, employing CMOS process technology and high speed circuit designing technology. It is most advantageous for the field where high speed and high density memory is required, such as the cache memory for main frame or 32-bit MPU. The HM621100A, packaged in a 400-mil plastic SOJ is available for high density mounting.




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