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HF51A060ACE, HF51C120ACE, HF51D120ACE

Table of contents:
Info of HF51A060ACE
Info of HF51C120ACE
Info of HF51D120ACE

HF51A060ACE, HF51C120ACE, HF51D120ACE Selling Leads, Datasheet

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HF51A060ACE, HF51C120ACE, HF51D120ACE Picture

HF51A060ACE, HF51C120ACE, HF51D120ACE Datasheet download

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Part Number: HF51A060ACE

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D/C: N/A

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HF51A060ACE General Description

The HF51A060ACE has some electrical characteristics (wafer form).When parameter is VFM,the description is forward voltage,the guaranteed (Min/Max) is 1.2V Max.,the test conditions is TJ = 25,IF = 10.0A.When parameter is BVR,the description is reverse breakdown voltage,the guaranteed (Min/Max) is 600V Min.,the test conditions is TJ = 25,IR = 200A.When parameter is IRM,the description is reverse leakage current,the guaranteed (Min/Max) is 25A Max.,the test conditions is TJ = 25,VR = 600V.

The HF51A060ACE has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 99% Al, 1% Si (3 microns).The chip dimensions is 0.340" x 0.195" .The wafer diameter is 125mm,with std.< 100 > flat.The wafer thickness is .015" ± .003".The relevant die mechanical dwg. number is 01-5312.The minimum street width is 100 microns.The reject ink dot size is 0.25 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.

At present there is not too much information about this model.If you are willing to find more about HF51A060ACE,please pay attention to our web! We will promptly update the relevant information.

HF51A060ACE Maximum Ratings

HF51A060ACE Features

HF51C120ACE General Description

The HF51C120ACE has some electrical characteristics (wafer form).When parameter is VFM,the description is forward voltage,the guaranteed (Min/Max) is 3V Max.,the test conditions is TJ = 25,IF = 16A.When parameter is BVR,the description is reverse breakdown voltage,the guaranteed (Min/Max) is 1200V Min.,the test conditions is TJ = 25,IR = 200A.When parameter is IRM,the description is reverse leakage current,the guaranteed (Min/Max) is 20A Max.,the test conditions is TJ = 25,VR = 1200V.

The HF51C120ACE has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 99% Al, 1% Si (3 microns).The chip dimensions is 0.340" x 0.195" .The wafer diameter is 125mm,with std.< 100 > flat.The wafer thickness is .015" ± .003".The relevant die mechanical dwg. number is 01-5172.The minimum street width is 100 microns.The reject ink dot size is 0.25 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.

At present there is not too much information about this model.If you are willing to find more about HF51C120ACE,please pay attention to our web! We will promptly update the relevant information.

HF51C120ACE Maximum Ratings

HF51C120ACE Features

HF51D120ACE Features

• GEN3 Hexfred Technology
• Low V_F
• Low I_RR
• Low t_RR
• Soft Reverse Recovery

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