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The H21A series are gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The pckaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and rliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output rom an "ON" to an "OFF" state.
H21A5 Maximum Ratings
Parameter
Symbol
Rating
Unit
Operating Temperature
T OPR
-55 to +100
°C
Storage Temperature
T STG
-55 to +100
°C
Soldering Temperature (Iron) (2,3 and 4)
T SOL-I
240 for 5 sec
°C
Soldering Temperature (Flow) (2 and 3)
T SOL-F
260 for 10 sec
°C
INPUT (EMITTER) Continuous Forward Current
IF
50
mA
Reverse Voltage
VR
6
V
Power Dissipation (1)
PD
100
mW
OUTPUT (SENSOR) Collector to Emitter Voltage
V CEO
55
V
Emitter to Collector Voltage
V ECO
4.5
V
Collector Current
IC
20
mA
Power Dissipation (TC = 25°C) (1)
PD
150
mW
1. Derate power dissipation linearly 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16" (1.6mm) minimum from housing.
H21A5 Features
• Opaque housing • Low cost • .035" apertures • High I cON)