Optical Switches, Transmissive, with Phototransistor Output Slotted Opt Switch
H21B6: Optical Switches, Transmissive, with Phototransistor Output Slotted Opt Switch
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Parameter |
Symbol |
Rating |
Unit |
Operating Temperature |
T OPR |
-55 to +100 |
°C |
Storage Temperature |
T STG |
-55 to +100 |
°C |
Soldering Temperature (Iron) (2,3 and 4) |
T SOL-I |
240 for 5 sec |
°C |
Soldering Temperature (Flow) (2 and 3) |
T SOL-F |
260 for 10 sec |
°C |
INPUT (EMITTER) Continuous Forward Current |
IF |
50 |
mA |
Reverse Voltage |
VR |
6 |
V |
Power Dissipation (1) |
PD |
100 |
mW |
OUTPUT (SENSOR) Collector to Emitter Voltage |
V CEO |
55 |
V |
Emitter to Collector Voltage |
V ECO |
6 |
V |
Collector Current |
IC |
40 |
mA |
Power Dissipation (TC = 25°C) (1) |
PD |
150 |
mW |
The H21B4, H21B5 and H21B6 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The pack aging system of H21B4, H21B5 and H21B6 is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an "ON" to an "OFF" state.
Technical/Catalog Information | H21B6 |
Vendor | Fairchild Semiconductor |
Category | Sensors, Sensor Evaluation Kits |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | H21B6 H21B6 |