GR2J, GR2K, GR2M Selling Leads, Datasheet
D/C:09+
D/C:09+
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PDF/DataSheet Download
Datasheet: GR2J
File Size: 48962 KB
Manufacturer: EIC [EIC discrete Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: GR2K
File Size: 48962 KB
Manufacturer: EIC [EIC discrete Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: GR2M
File Size: 48962 KB
Manufacturer: EIC [EIC discrete Semiconductors]
Download : Click here to Download
Symbols | GR2A | GR2B | GR2D | GR2G | GR2J | GR2K | GR2M | Units | |
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Current Ta = 75 °C | IF(AV) | 2.0 | A | ||||||
Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) |
IFSM | 75 | A | ||||||
Maximum instantaneous forward voltage at 1.0A | VF | 1.3 | V | ||||||
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=125 |
IR | 10 | A | ||||||
IR(H) | 500 | A | |||||||
Maximum reverse recovery time (Note 1) | Trr | 150 | 250 | 500 | nS | ||||
Typical junction capacitance (Note 2) | CJ | 15 | F | ||||||
Junction Temperature Range | TJ | - 65 to + 150 | /W | ||||||
Storage Temperature Range | TSTG | - 65 to + 150 |
·Glass passivated chip
·High current capability
·High reliability
·Low reverse current
·Low forward voltage drop
·Fast switching for high efficiency
Symbols | GR2A | GR2B | GR2D | GR2G | GR2J | GR2K | GR2M | Units | |
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Current Ta = 75 °C | IF(AV) | 2.0 | A | ||||||
Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) |
IFSM | 75 | A | ||||||
Maximum instantaneous forward voltage at 1.0A | VF | 1.3 | V | ||||||
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=125 |
IR | 10 | A | ||||||
IR(H) | 500 | A | |||||||
Maximum reverse recovery time (Note 1) | Trr | 150 | 250 | 500 | nS | ||||
Typical junction capacitance (Note 2) | CJ | 15 | F | ||||||
Junction Temperature Range | TJ | - 65 to + 150 | /W | ||||||
Storage Temperature Range | TSTG | - 65 to + 150 |
·Glass passivated chip
·High current capability
·High reliability
·Low reverse current
·Low forward voltage drop
·Fast switching for high efficiency
Symbols | GR2A | GR2B | GR2D | GR2G | GR2J | GR2K | GR2M | Units | |
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Current Ta = 75 °C | IF(AV) | 2.0 | A | ||||||
Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) |
IFSM | 75 | A | ||||||
Maximum instantaneous forward voltage at 1.0A | VF | 1.3 | V | ||||||
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=125 |
IR | 10 | A | ||||||
IR(H) | 500 | A | |||||||
Maximum reverse recovery time (Note 1) | Trr | 150 | 250 | 500 | nS | ||||
Typical junction capacitance (Note 2) | CJ | 15 | F | ||||||
Junction Temperature Range | TJ | - 65 to + 150 | /W | ||||||
Storage Temperature Range | TSTG | - 65 to + 150 |
·Glass passivated chip
·High current capability
·High reliability
·Low reverse current
·Low forward voltage drop
·Fast switching for high efficiency