GA75TS120U, GA75TS60U, GA76C8128ALLFW70 Selling Leads, Datasheet
MFG:IR Package Cooled:75A/1200V/IGBT D/C:05+
GA75TS120U, GA75TS60U, GA76C8128ALLFW70 Datasheet download
Part Number: GA75TS120U
MFG: IR
Package Cooled: 75A/1200V/IGBT
D/C: 05+
GA75TS120U, GA75TS60U, GA76C8128ALLFW70
- Table of contents:
Info of GA75TS120U
Info of GA75TS60U
Info of GA76C8128ALLFW70
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About GA75TS120U
PDF/DataSheet Download
Datasheet: GA75TS120U
File Size: 264588 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About GA75TS60U
PDF/DataSheet Download
Datasheet: GA75TS60U
File Size: 221731 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About GA75TS120U
PDF/DataSheet Download
Datasheet: GA75TS120U
File Size: 264588 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
GA75TS120U Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 1200 | V |
| IC @ TC=25°C | Continuous Collector Current | 75 | A |
| ICM | Pulsed Collector Current | 150 | |
| ILM | Peak Switching Current | 150 | |
| IFM | Peak Diode Forward Current | 150 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| VISOL | RMS Isolation Voltage, Any Terminal to Case, t=1 min | 2500 | |
| PD @ TC=25°C | Maximum Power Dissipation | 390 | W |
| PD @ TC=85°C | Maximum Power Dissipation |
200 | |
| TJ | Operating Junction | -40 to + 150 | °C |
| TSTG | Storage Temperature Range | -40 to + 125 |
GA75TS120U Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
GA75TS120U Typical Application
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,SMPS, Welding
• Lower EMI, requires less snubbing
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,SMPS, Welding
• Lower EMI, requires less snubbing
GA75TS60U Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 600 | V |
| IC @ TC=25°C | Continuous Collector Current | 75 | A |
| ICM | Pulsed Collector Current · | 150 | |
| ILM | Peak Switching Current, | 150 | |
| IFM | Peak Diode Forward Current | 150 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| VISOL | RMS Isolation Voltage, Any Terminal to Case, t=1 min | 2500 | |
| PD @ TC=25°C | Maximum Power Dissipation | 285 | W |
| PD @ TC=85°C | Maximum Power Dissipation |
150 | |
| TJ | Operating Junction | -40 to + 150 | °C |
| TSTG | Storage Temperature Range | -40 to + 125 |
GA75TS60U Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
GA75TS60U Typical Application
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
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