FRS400EA180/120, FRS430D, FRS430H Selling Leads, Datasheet
MFG:EUPEC Package Cooled:TO-200AB D/C:2009
FRS400EA180/120, FRS430D, FRS430H Datasheet download
Part Number: FRS400EA180/120
MFG: EUPEC
Package Cooled: TO-200AB
D/C: 2009
FRS400EA180/120, FRS430D, FRS430H
- Table of contents:
Info of FRS400EA180/120
Info of FRS430D
Info of FRS430H
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About FRS130D
PDF/DataSheet Download
Datasheet: FRS130D
File Size: 50126 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About FRS430D
PDF/DataSheet Download
Datasheet: FRS430D
File Size: 50614 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About FRS430H
PDF/DataSheet Download
Datasheet: FRS430H
File Size: 50614 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
FRS430D General Description
The Intersil Corporation has designed a series of SECOND GENERATION hardenedpower MOSFETs of both N and P channel enhancement types with ratingsfrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toxhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
FRS430D Maximum Ratings
| FRS430D, R, H | UNITS | ||
| Drain-Source Voltage | VDS |
500 |
V |
| Drain-Gate Voltage (RGS = 20k). | VDGR |
500 |
V |
| Continuous Drain Current TC = +25 TC = +100 |
ID ID |
3 2 |
A A |
| Pulsed Drain Current | IDM |
9 |
A |
| Gate-Source Voltage | VGS |
±20 |
V |
| Maximum Power Dissipation TC = +25 TC = +100 |
PT PT |
50 20 |
W W |
| Derated Above +25 |
0.40 |
W/ | |
| Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM |
9 |
A |
| Continuous Source Current (Body Diode) | IS |
3 |
A |
| Pulsed Source Current (Body Diode) | ISM |
9 |
A |
| Operating And Storage Temperature | TJC, TSTG |
-55 to +150 |
|
| Lead Temperature (During Soldering) | |||
| Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL |
300 |
FRS430D Features
• 3A, 500V, RDS(on) = 2.52
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 8.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 8.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
FRS430H General Description
The Intersil Corporation has designed a series of SECOND GENERATION hardenedpower MOSFETs of both N and P channel enhancement types with ratingsfrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toxhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
FRS430H Maximum Ratings
| FRS430D, R, H | UNITS | ||
| Drain-Source Voltage | VDS |
500 |
V |
| Drain-Gate Voltage (RGS = 20k). | VDGR |
500 |
V |
| Continuous Drain Current TC = +25 TC = +100 |
ID ID |
3 2 |
A A |
| Pulsed Drain Current | IDM |
9 |
A |
| Gate-Source Voltage | VGS |
±20 |
V |
| Maximum Power Dissipation TC = +25 TC = +100 |
PT PT |
50 20 |
W W |
| Derated Above +25 |
0.40 |
W/ | |
| Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM |
9 |
A |
| Continuous Source Current (Body Diode) | IS |
3 |
A |
| Pulsed Source Current (Body Diode) | ISM |
9 |
A |
| Operating And Storage Temperature | TJC, TSTG |
-55 to +150 |
|
| Lead Temperature (During Soldering) | |||
| Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL |
300 |
FRS430H Features
• 3A, 500V, RDS(on) = 2.52
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 8.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 8.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
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