FRS230H

The Intersil Corporation FRS230H has designed a series of SECOND GENERATION hardenedpower MOSFETs of both N and P channel enhancement types with ratingsrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness FRS230H is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm² for 500V product to 1E14n/cm² for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.

This MOSFET FRS230H is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. FRS230H is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRS230H may be supplied as a die or in various packages other than shown above. eliability screening is available as either non TX (commercial), TX equivalent of IL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of IL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired eviations from the data sheet.