FRF506G, FRF507G, FRF9150D Selling Leads, Datasheet
MFG:TAIWAN Package Cooled:TO-220 D/C:08+
FRF506G, FRF507G, FRF9150D Datasheet download
Part Number: FRF506G
MFG: TAIWAN
Package Cooled: TO-220
D/C: 08+
FRF506G, FRF507G, FRF9150D
- Table of contents:
Info of FRF506G
Info of FRF507G
Info of FRF9150D
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About FRF506G
PDF/DataSheet Download
Datasheet: FRF506G
File Size: 127295 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
About FRF507G
PDF/DataSheet Download
Datasheet: FRF507G
File Size: 127295 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
About FRF9150D
PDF/DataSheet Download
Datasheet: FRF9150D
File Size: 50302 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
FRF506G Maximum Ratings
| Type Number | Symbol | FRF501G | FRF502G | FRF503G | FRF504G | FRF505G | FRF506G | FRF507G | Units |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum Average Forward Rectified Current | I(AV) | 5.0 | A | ||||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM | 30 | A | ||||||
| Maximum Instantaneous Forward Voltage @ 5.0A | VF | 1.5 | V | ||||||
| Maximum DC Reverse Current @ TC =25 at Rated DC Blocking Voltage @ TC =125 |
IR | 5.0 100 |
uA uA | ||||||
| Maximum Reverse Recovery Time ( Note 1) | Trr | 150 | 250 | 500 | nS | ||||
| Typical Thermal Resistance (Note 2) | RJC | 4.0 | /W | ||||||
| Operating and Storage Temperature Range | TJ ,TSTG | -65 to +150 | |||||||
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink.
FRF506G Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
High current capability
High reliability
High surge current capability
FRF507G Maximum Ratings
| Type Number | Symbol | FRF501G | FRF502G | FRF503G | FRF504G | FRF505G | FRF506G | FRF507G | Units |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum Average Forward Rectified Current | I(AV) | 5.0 | A | ||||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM | 30 | A | ||||||
| Maximum Instantaneous Forward Voltage @ 5.0A | VF | 1.5 | V | ||||||
| Maximum DC Reverse Current @ TC =25 at Rated DC Blocking Voltage @ TC =125 |
IR | 5.0 100 |
uA uA | ||||||
| Maximum Reverse Recovery Time ( Note 1) | Trr | 150 | 250 | 500 | nS | ||||
| Typical Thermal Resistance (Note 2) | RJC | 4.0 | /W | ||||||
| Operating and Storage Temperature Range | TJ ,TSTG | -65 to +150 | |||||||
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink.
FRF507G Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
High current capability
High reliability
High surge current capability
FRF9150D Features
• 23A, -100V, rDS(ON) = 0.140
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
• Gamma Dot - Survives 3E9 RAD (Si)/s at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD (Si)/s Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
• Gamma Dot - Survives 3E9 RAD (Si)/s at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD (Si)/s Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
FRF9150D Typical Application
Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.
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