FRF250H

Features:

• 23A, 200V, RDS(on) = 0.115
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 12.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm²
- Usable to 1E14 Neutrons/cm²


Specifications




Description

The Intersil Corporation FRF250H has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness FRF250H is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET FRF250H is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. FRF250H is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRF250H may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet.