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FPN630 DZ, FPN630A DZ, FPN660

Table of contents:
Info of FPN630 DZ
Info of FPN630A DZ
Info of FPN660

FPN630 DZ, FPN630A DZ, FPN660 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-92L D/C:04+

FPN630 DZ, FPN630A DZ, FPN660 Datasheet download

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Part Number: FPN630 DZ

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-92L

D/C: 04+

Description: TRANSISTOR PNP 60V 3A TO-226

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FPN660 Parameters

Technical/Catalog Information	FPN660
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	450mV @ 200mA, 2A
Frequency - Transition	75MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FPN660 FPN660

FPN660 Maximum Ratings

Symbol	Parameter	FPN660	FPN660A	Units
V_CEO	Collector-Emitter Voltage	60	60	V
V_CBO	Collector-Base Voltage	80	60	V
V_EBO	Emitter-Base Voltage	5	5	V
I_C	Collector Current - Continuous	3	3	A
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 ~ +150	-55 ~ +150	°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors

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