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The differential magnetoresistive sensor FP 210 L 100-22 consists of two series coupled L-type InSb/NiSb semiconductor resistors. The resistance value of the MRs, which are mounted onto an insulated ferrite substrate, can be magnetically controlled. The sensor is encapsulated in a plastic package with three in-line contacts extending from the base. The basic resistance of the total system in the unbiased state is 2´100 W. A permanent magnet which supplies a biasing magnetic field is built into the housing.
FP210L100-22 Maximum Ratings
Parameter
Symbol
Value
Unit
Operating temperature
TA
40 / + 140
°C
Storage temperature
Tstg
40 / + 150
°C
Power dissipation1)
Ptot
400
mW
Supply voltage2)
VIN
7.5
V
Insulation voltage between terminals and casing
VI
> 100
V
Thermal conductivity
GthA
5
mW/K
FP210L100-22 Features
• High operating temperature • High output voltage • Robust cylindrical housing • Biasing magnet build in • Signal amplitude independent of speed • Easily connectable
FP210L100-22 Typical Application
• Detection of speed • Detection of position • Detection of sense of rotation • Angle encoder • Linear position sensing