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The FOD816 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon photodarlington output in a 4-pin dual in-line package.
FOD816 Maximum Ratings
Parameter
Symbol
Value
Units
TOTAL DEVICE
Storage Temperature
TSTG
-55 to +125
°C
Operating Temperature
TOPR
-30 to +100
°C
Lead Solder Temperature
TSOL
260 for 10 sec
°C
Total Power Dissipation
PTOT
200
mW
INPUT
Forward Current
IF
±50
mA
Power Dissipation
P
70
mW
OUTPUT
Collector-Emitter Voltage
VCEO
35
v
Emitter-Collector Voltage
VCEO
6
v
Collector Current
IC
80
mA
Collector Power Dissipation
PC
150
mW
FOD816 Features
AC input response Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: 600% minimum Safety agency approvals pending High input-output isolation voltage of 5000Vrms
FOD816 Typical Application
Power supply regulators Digital logic inputs Microprocessor inputs