FK7UM-12, FK85325, FKBL404 Selling Leads, Datasheet
Package Cooled:TO-220 D/C:04+
FK7UM-12, FK85325, FKBL404 Datasheet download
Part Number: FK7UM-12
MFG: --
Package Cooled: TO-220
D/C: 04+
Package Cooled:TO-220 D/C:04+
FK7UM-12, FK85325, FKBL404 Datasheet download
MFG: --
Package Cooled: TO-220
D/C: 04+
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PDF/DataSheet Download
Datasheet: FK7UM-12
File Size: 53846 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: FKBL404
File Size: 21775 KB
Manufacturer: EIC [EIC discrete Semiconductors]
Download : Click here to Download
Symbol | Parameter | Conditions |
Ratings |
Unit | |
VDSS |
Drain-source voltage |
VGS = 0V | 600 | V | |
VGSS |
Gate-source voltage |
VDS = 0V | ±30 | V | |
ID |
Drain current |
7 | A | ||
IDM | Drain current (Pulsed) |
21 |
A | ||
IS |
Source current |
7 | A | ||
ISM |
Source current (Pulsed) |
21 | A | ||
PD | Maximum power dissipation |
125 |
W | ||
Tch | Channel temperature | 55 ~ +150 | |||
Tstg |
Storage Temperature |
55 ~ +150 |
|||
- |
Weight |
Typical value | 2.0 | g |
RATING |
SYMBOL | FKBL 400 |
FKBL 401 |
FKBL 402 |
FKBL 404 |
FKBL 406 |
FKBL 408 |
FKBL 410 |
UNIT |
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Current TC= 50°C |
IF(AV) |
4.0 | Amps | ||||||
Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) |
IFSM |
150 |
Amps | ||||||
Rating for fusing ( t < 8.3 ms. ) |
I2t |
166 |
A2S | ||||||
Maximum Forward Voltage drop per Diode at IF = 4.0 Amps. |
VF |
1.4 |
Volts | ||||||
Maximum DC reverse current Ta=25 at rated DC Blocking voltage Ta=100 |
IR |
10 |
A | ||||||
IR(H) |
1.0 |
mA | |||||||
Maximum Reverse Recovery Time (Note 1) | Trr |
150 |
250 | 500 |
ns | ||||
Typical Thermal Resistance per Diode (Note 2) |
RJC |
3.3 |
°C/W | ||||||
Junction Temperature Range |
TJ |
- 50 to + 150 | |||||||
Storage Temperature Range |
TSTG |
- 50 to + 150 |