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FDN4040IS325X, FDN5618, FDN5618P

Table of contents:
Info of FDN4040IS325X
Info of FDN5618
Info of FDN5618P

FDN4040IS325X, FDN5618, FDN5618P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:09+ D/C:12000

FDN4040IS325X, FDN5618, FDN5618P Datasheet download

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Part Number: FDN5618P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: 09+

D/C: 12000

Description: MOSFET P-CHAN 60V 1.25A SSOT3

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FDN5618P Parameters

Technical/Catalog Information	FDN5618P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	1.25A
Rds On (Max) @ Id, Vgs	170 mOhm @ 1.25A, 10V
Input Capacitance (Ciss) @ Vds	430pF @ 30V
Power - Max	460mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	13.8nC @ 10V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN5618P FDN5618P FDN5618PCT ND FDN5618PCTND FDN5618PCT

FDN5618P General Description

This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.

FDN5618P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-60	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-1.25	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-10	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.5	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.46	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150

FDN5618P Features

* 1.25 A, 60 V. R _DS(ON) = 0.170 @ V_GS = 10 V
R_DS(ON) = 0.230 @ V_GS = 4.5 V
* Fast switching speed
* High performance trench technology for extremely low R _DS(ON)

FDN5618P Typical Application

* DC-DC converters
* Load switch
* Power management

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