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The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor's monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter.
FDN372S Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±16
V
ID
Drain Current Continuous (Note 1a) Pulsed
2.6
A
10
PD
Power Dissipation for Single Operation(Note 1a) (Note 1b)
0.5
W
0.46
TJ, TSTG
Operating and Storage Temperature
-55 to 175
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad.
FDN372S Features
• 2.6 A, 30 V. RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON)