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FDN358P(2DCEA), FDN359AN, FDN359AN-NL

Table of contents:
Info of FDN358P(2DCEA)
Info of FDN359AN
Info of FDN359AN-NL

FDN358P(2DCEA), FDN359AN, FDN359AN-NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT23 D/C:9918+

FDN358P(2DCEA), FDN359AN, FDN359AN-NL Datasheet download

Five Points

Part Number: FDN359AN

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT23

D/C: 9918+

Description: MOSFET N-CHAN 30V 2.7A SSOT3

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FDN359AN Parameters

Technical/Catalog Information	FDN359AN
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.7A
Rds On (Max) @ Id, Vgs	46 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds	480pF @ 10V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7nC @ 5V
Package / Case	Super SOT-3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN359AN FDN359AN FDN359ANTR ND FDN359ANTRND FDN359ANTR

FDN359AN General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FDN359AN Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-2.7	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-15	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.5	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.46	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150

FDN359AN Features

2.7 A, 30 V. R _DS(ON) = 0.046@ V_GS = 10 V

R _DS(ON) = 0.060@ V_GS = 4.5 V.
Very fast switching.
Low gate charge (5nC typical).
High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

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