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This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
FDN352AP Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
-1.3
A
-10
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b)
0.5
W
0.46
TJ, Tstg
Operating and StorageJunctionTemperatureRange
-55 to +150
FDN352AP Features
1.3 A, 30V R DS(ON) = 180m @ VGS = 10V 1.1 A, 30V R DS(ON) = 300 m@ VGS = 4.5V High performance trench technology for extremely low R DS(ON) High power version of industry Standard SOT-23 package. dentical pin-out to SOT-23 with 30% higher power handling capability.