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FDN338LT1, FDN338N, FDN338P

Table of contents:
Info of FDN338LT1
Info of FDN338N
Info of FDN338P

FDN338LT1, FDN338N, FDN338P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:12000 D/C:07+

FDN338LT1, FDN338N, FDN338P Datasheet download

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Part Number: FDN338P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: 12000

D/C: 07+

Description: MOSFET P-CH 20V 1.6A SSOT3

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FDN338P Parameters

Technical/Catalog Information	FDN338P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.6A
Rds On (Max) @ Id, Vgs	115 mOhm @ 1.6A, 4.5V
Input Capacitance (Ciss) @ Vds	451pF @ 10V
Power - Max	460mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	6.2nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN338P FDN338P FDN338PCT ND FDN338PCTND FDN338PCT

FDN338P General Description

SuperSOT^TM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

FDN338P Maximum Ratings

Symbol	Parameter	FDN338P	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain/Output Current - Continuous - Pulsed	-1.6	A
I_D	Drain/Output Current - Continuous - Pulsed	-5	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.5	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.46	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150

FDN338P Features

-1.6 A, -20 V, R _DS(ON)= 0.13 @ V _GS = -4.5 V
R _DS(ON) = 0.18 @ V _GS= -2.5 V.
Industry standard outline SOT-23 surface mount package using proprietary SuperSOT^TM-3 design for superior thermal and electrical capabilities.
High density cell design for extremely low R _DS(ON)
Exceptional on-resistance and maximum DC current capability.

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