MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:Sot-23 D/C:07+
FDN336P, FDN336P_NL, FDN336P-NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: Sot-23
D/C: 07+
Description: MOSFET P-CH -20V -1.3A SSOT-3
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PDF/DataSheet Download
Datasheet: FDN336P
File Size: 65753 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDN302
File Size: 105925 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDN302
File Size: 105925 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDN336P |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1.3A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.3A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 10V |
| Power - Max | 460mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 5nC @ 4.5V |
| Package / Case | SSOT-3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDN336P FDN336P FDN336PDKR ND FDN336PDKRND FDN336PDKR |
FDN336P is a kind of single P-Channel 2.5 V specified PowerTrenchTM MOSFET. The device is intended for portable electronics applications such as load switching and power management, battery charging circuits, and DC/DC conversion.
There are some features as follows. (1)-1.3 A, -20 V. RDS(ON)=0.20 @ VGS=-4.5 V and RDS(ON)=0.27 @ VGS=-2.5 V. (2)Low gate charge (3.6 nC typical). (3)High performance trench technology for extremely low RDS(ON). (4)High power version of industry standard SOT-23 package.Identical pin out to SOT-23 with 30% higher power handling capability.
The following is about the absolute maximum ratings at TA=25 unless other wise noted. (1)The VDSS (Drain-Source Voltage) is -20 V. (2)The VGSS (Gate-Source Voltage) is ±8 V. (3)The ID (Drain Current - Continuous) is -1.3 A and the ID (Drain Current - Pulsed) is -10 A. (4)The TJ,TSTG (Operating and Storage Temperature Range) is from -55 to +150. (5)The RJA (Thermal Resistance, Junction-to-Ambient) is 250 /W. (6)The RJC (Thermal Resistance, Junction-to-Case) is 75/W.
| Technical/Catalog Information | FDN336P-NL |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1.3A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.3A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 10V |
| Power - Max | 460mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 5nC @ 4.5V |
| Package / Case | SuperSOT?-3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDN336P NL FDN336PNL |
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