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This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDN335N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
1.7
A
8
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b)
0.5
W
0.46
TJ, Tstg
Operating and StorageJunctionTemperatureRange
-55 to +150
FDN335N Features
* 1.7 A, 20 V. R DS(ON) = 0.07 @ VGS = 4.5 V R DS(ON) = 0.100 @ VGS = 2.5 V.
* Low gate charge (3.5nC typical). * High performance trench technology for extremely low R DS(ON) * High power and current handling capability.