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FDN327N, FDN327N-NL, FDN330P

Table of contents:
Info of FDN327N
Info of FDN327N-NL
Info of FDN330P

FDN327N, FDN327N-NL, FDN330P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-23 D/C:05+

FDN327N, FDN327N-NL, FDN330P Datasheet download

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Part Number: FDN327N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: SOT-23

D/C: 05+

Description: MOSFET N-CH 20V 2A SSOT-3

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FDN327N Parameters

Technical/Catalog Information	FDN327N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	70 mOhm @ 2A, 4.5V
Input Capacitance (Ciss) @ Vds	423pF @ 10V
Power - Max	460mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	6.3nC @ 4.5V
Package / Case	SuperSOT?-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN327N FDN327N FDN327NDKR ND FDN327NDKRND FDN327NDKR

FDN327N General Description

This 20V N-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.

FDN327N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	2	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	8	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.5	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.46	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150

FDN327N Features

2 A, 20 V. R _DS(ON) = 70 m @ V_GS = 4.5 V
R_DS(ON) = 80 m @ V_GS = 2.5 V
R_DS(ON) = 120m @ V_GS = 1.8 V
Low gate charge (4.5 nC typical)
Fast switching speed
High performance trench technology for extremely low R _DS(ON)

FDN327N Typical Application

Load switch
Battery protection
Power management

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