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This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDN308P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
-1.5
A
-10
PD
Maximum Power Dissipation(Note 1a) (Note 1b)
0.5
W
0.46
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
FDN308P Features
* 20 V, 1.5 A. R DS(ON) = 125 m @ VGS = 4.5 V R DS(ON) = 190 m @ VGS = 2.5 V * Fast switching speed * High performance trench technology for extremely low R DS(ON) * SuperSOTTM -3 provides low R DS(ON) and 30% higher power handling capability than SOT23 in the same footprint
FDN308P Typical Application
* Power management * Load switch * Battery protection