MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:TO-220F
FCA20A04, FCA20N60, FCA20N60F Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: TO-220F
Description: MOSFET N-CHAN 600V 20A TO-3PN
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PDF/DataSheet Download
Datasheet: FCA16N60
File Size: 591286 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCA20N60
File Size: 711345 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCA16N60
File Size: 591286 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FCA20N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 3080pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 98nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCA20N60 FCA20N60 |
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency.
| Symbol | Parameter | FCH20N60 | FCA20N60 | Unit |
| VDSS |
Drain-Source Voltage | 600 | V | |
| ID |
Drain Current - Continuous (TC = 25 ) - Continuous (TC = 100 ) |
20 12.5 |
A A | |
| IDM |
Drain Current - Pulsed (Note 1) | 60 | A | |
| VGSS |
Gate-Source voltage | ±30 | V | |
| EAS |
Single Pulsed Avalanche Energy (Note 2) | 690 |
mJ | |
| IAR |
Avalanche Current (Note 1) | 20 |
A | |
| EAR |
Repetitive Avalanche Energy (Note 1) | 20.8 | mJ | |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
| PD |
Power Dissipation (T = 25) - Derate above 25°C |
208 1.67 |
W W/°C | |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds |
300 | °C | |
| Technical/Catalog Information | FCA20N60F |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 3080pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 98nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCA20N60F FCA20N60F |
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